DMG6601LVT DMG6601LVT-7 MOSFET N and P-Channel SOT-23-6
  • DMG6601LVT DMG6601LVT-7 MOSFET N and P-Channel SOT-23-6

DMG6601LVT DMG6601LVT-7 MOSFET N and P-Channel SOT-23-6

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Details

Manufacturer: DIODES INCORPORATED
Manufacturer Part No.: DMG6601LVT-7

Datasheet: Click Here
RoHs: Yes

Specifications
Product Category: MOSFET
Number of Elements: 2
FET Type: N and P-Channel
Continuous Drain Current(@25
°C)N-ch,P-ch: 3.8A,2.5A
Drain-source on-state Resistance N-ch Typ (R
DS(ON)@VGS=4.5V,ID=3A): 38m
Drain-source on-state Resistance P-ch Typ (RDS(ON)@VGS=-4.5V,ID=-2A): 81m

Drian-Source Voltage(VDSS)N-ch,P-ch: 30V,-30V
Operating Temperature: -55°C to +150°C
Case: SOT-23-6

 

Applications: Backlighting, Power Management Functions,DC-DC Converters

 

Additional Information

Manufacturer DIODES INCORPORATED
MPN DMG6601LVT-7
SKU A-4634

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